Methods for forming resistance random access memory structure

ABSTRACT

A bistable resistance random access memory is described for enhancing the data retention in a resistance random access memory member. A dielectric member, e.g. the bottom dielectric member, underlies the resistance random access memory member which improves the SET/RESET window in the retention of information. The deposition of the bottom dielectric member is carried out by a plasma-enhanced chemical vapor deposition or by high-density-plasma chemical vapor deposition. One suitable material for constructing the bottom dielectric member is a silicon oxide. The bistable resistance random access memory includes a bottom dielectric member disposed between a resistance random access member and a bottom electrode or bottom contact plug. Additional layers including a bit line, a top contact plug, and a top electrode disposed over the top surface of the resistance random access memory member. Sides of the top electrode and the resistance random access memory member are substantially aligned with each other.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 13/281,266, filed on 25 Oct. 2011; which is a continuation ofU.S. patent application Ser. No. 11/560,723, filed on 16 Nov. 2006, nowU.S. Pat. No. 8,067,762, both of which are incorporated by reference asif fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to high density memory devices based onprogrammable resistance memory materials, including metal-oxide basedmaterials and other materials, and to methods for manufacturing suchdevices.

2. Description of Related Art

Phase change based memory materials are widely used in read-writeoptical disks. These materials have at least two solid phases, includingfor example a generally amorphous solid phase and a generallycrystalline solid phase. Laser pulses are used in read-write opticaldisks to switch between phases and to read the optical properties of thematerial after the phase change.

Phase change based memory materials, like chalcogenide based materialsand similar materials, can also be caused to change phase by applicationof electrical current at levels suitable for implementation inintegrated circuits. The generally amorphous state is characterized byhigher resistivity than the generally crystalline state, which can bereadily sensed to indicate data. These properties have generatedinterest in using programmable resistive material to form nonvolatilememory circuits, which can be read and written with random access.

The change from the amorphous to the crystalline state is generally alower current operation. The change from crystalline to amorphous,referred to as reset herein, is generally a higher current operation,which includes a short high current density pulse to melt or breakdownthe crystalline structure, after which the phase change material coolsquickly, quenching the phase change process, allowing at least a portionof the phase change structure to stabilize in the amorphous state. It isdesirable to minimize the magnitude of the reset current used to causethe transition of phase change material from the crystalline state tothe amorphous state. The magnitude of the reset current needed for resetcan be reduced by reducing the size of the phase change material elementin the cell and of the contact area between electrodes and the phasechange material, so that higher current densities are achieved withsmall absolute current values through the phase change material element.

One direction of development has been toward forming small pores in anintegrated circuit structure, and using small quantities of programmableresistive material to fill the small pores. Patents illustratingdevelopment toward small pores include: Ovshinsky, “Multibit Single CellMemory Element Having Tapered Contact,” U.S. Pat. No. 5,687,112, issuedNov. 11, 1997; Zahorik et al., “Method of Making Chalogenide [sic]Memory Device,” U.S. Pat. No. 5,789,277, issued Aug. 4, 1998; Doan etal., “Controllable Ovonic Phase-Change Semiconductor Memory Device andMethods of Fabricating the Same,” U.S. Pat. No. 6,150,253, issued Nov.21, 2000.

Problems have arisen in manufacturing such devices with very smalldimensions, and with variations in process that meet tightspecifications needed for large-scale memory devices. As demand forgreater memory capacity is sought, a phase change memory that storesmultiple bits per memory layer would be highly desirable.

SUMMARY OF THE INVENTION

A bistable resistance random access memory (RRAM) is described forenhancing the retention in a resistance random access memory member. Adielectric member, i.e. the bottom dielectric member, underlies theresistance random access memory member and improves the SET/RESET windowin the retention of information over time. The deposition of the bottomdielectric member is carried out by a plasma-enhanced chemical vapordeposition or by high-density-plasma chemical vapor deposition. Onesuitable material for constructing the bottom dielectric member includesa silicon oxide. An exemplary thickness for the bottom dielectric memberranges from about 1 nm to about 10 nm, or less than 1 nm. Suitablematerials for the programmable resistance random access memory memberinclude, but are not limited to, a metal oxide, a colossalmagnetoresistance (CMR) material, a two-element oxide, a polymer-basedmaterial, and a chalcogenide material. For example, the two-elementcompounds for implementing the programmable resistance random accessmemory member include Ni_(x)O_(y); Ti_(x)O_(y); Al_(x)O_(y); W_(x)O_(y);Zn_(x)O_(y); Zr_(x)O_(y); Cu_(x)O_(y); etc, where x:y=0.5:0.5, or othercompositions with x: 0˜1; y: 0˜1. Some metal-doped types of materialsfor implementing a metal-oxide include Al:ZnO and Al:ZrO.

In one embodiment, the bistable resistance random access memorycomprises a bottom dielectric member disposed between a resistancerandom access member and a bottom electrode or bottom contact plug.Additional layers, including a bit line, a top contact plug, and a topelectrode, are disposed over the top surface of the resistance randomaccess memory member. Sides of the top electrode and the resistancerandom access memory member are substantially aligned with each other.In another embodiment, the bistable resistance random access memoryincludes a bottom dielectric member disposed between a resistance randomaccess member and the contact plug where the resistance random accessmember embodies the bottom dielectric member. The bottom dielectricmember has an upper surface and side walls. The resistance random accessmemory member substantially covers the upper surface of the bottomdielectric member, and the sidewalls of the bottom dielectric member.

Broadly stated, a memory structure comprises a first electrode and aconductive member; a bottom dielectric member overlying the conductivemember, the bottom dielectric member having sides; a resistance memorymember overlying the bottom dielectric member, the resistance memorymember having sides that are substantially aligned with the sides of thebottom dielectric member; and a top dielectric underlying the firstelectrode, the top dielectric substantially covering the sides of theresistance random access memory member and the sides of the bottomdielectric member.

Advantageously, the present invention improves the retention duration ofa resistance random access memory.

The structures and methods of the present invention are disclosed in thedetailed description below. This summary does not purport to define theinvention. The invention is defined by the claims. These and otherembodiments, features, aspects, and advantages of the technology can beunderstood with regard to the following description, appended claims andaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with respect to specific embodimentsthereof, and reference will be made to the drawings, in which:

FIG. 1 is a schematic diagram of a bistable resistance random accessmemory array in accordance with the present invention.

FIG. 2 is a simplified block diagram of an integrated circuit of an RRAMarchitecture according to an embodiment of the present invention.

FIG. 3 is a simplified structural diagram illustrating a firstembodiment of a resistance random access memory with a bottom dielectricmember disposed between a resistance random access member and a contactplug (or a bottom electrode) in accordance with the present invention.

FIG. 4 is a simplified structural diagram illustrating a secondembodiment of a resistance random access memory with a bottom dielectricmember disposed between a resistance random access member and thecontact plug where the bottom dielectric member and the resistancerandom access member have varying lengths in accordance with the presentinvention.

FIG. 5 is a simplified structural diagram illustrating a thirdembodiment of a resistance random access memory with a bottom dielectricmember disposed between a resistance random access member and thecontact plug where the resistance random access member embodies thebottom dielectric member in accordance with the present invention.

FIG. 6 is a simplified structural diagram illustrating a fourthembodiment of a resistance random access memory with a bottom dielectricmember disposed between a resistance random access member and thecontact plug where the resistance random access member is placed betweena top dielectric member and the bottom dielectric member in accordancewith the present invention.

FIG. 7 is a simplified structural diagram illustrating a fifthembodiment of a resistance random access memory with a bottom dielectricmember disposed between a resistance random access member and thecontact plug where the bottom dielectric member and the resistancerandom access member have elongated lengths in accordance with thepresent invention.

FIG. 8 is a simplified structural diagram illustrating a sixthembodiment of a resistance random access memory with a bottom dielectricmember disposed between a resistance random access member and thecontact plug where a top dielectric member embodies the resistancerandom access member and a bottom dielectric member, in accordance withthe present invention.

FIG. 9 is a simplified structural diagram illustrating a sixthembodiment of a resistance random access memory with a bottom dielectricmember underlying a resistance random access memory member where theresistance random access member is placed between the top dielectricmember and the bottom dielectric member, the top dielectric memberunderlying the top electrode, the bottom dielectric member overlying abottom electrode, and the bottom electrode overlying the contact plug inaccordance with the present invention.

FIG. 10A is a timing diagram illustrating the measuring of a SET/RESETwindow of a programmable resistance random access memory in accordancewith the present invention.

FIG. 10B is a graphical diagram illustrating sample data curves of aprogrammable resistance random access memory with and without a bottomdielectric member in which the graph has a SET/RESET window parameter onthe y-axis and a retention test duration on the x-axis in accordancewith the present invention.

DETAILED DESCRIPTION

A description of structural embodiments and methods of the presentinvention is provided with reference to FIGS. 1-10. It is to beunderstood that there is no intention to limit the invention to thespecifically disclosed embodiments but that the invention may bepracticed using other features, elements, methods and embodiments. Likeelements in various embodiments are commonly referred to with likereference numerals.

FIG. 1 is a schematic illustration of a memory array 100, which can beimplemented as described herein. In the schematic illustration of FIG.1, a common source line 128, a word line 123 and a word line 124 arearranged generally parallel in the Y-direction. Bit lines 141 and 142are arranged generally parallel in the X-direction. Thus, a Y-decoderand a word line driver in a block 145 are coupled to the word lines 123,124. An X-decoder and a set of sense amplifiers in block 146 are coupledto the bit lines 141 and 142. The common source line 128 is coupled tothe source terminals of access transistors 150, 151, 152 and 153. Thegate of access transistor 150 is coupled to the word line 123. The gateof access transistor 151 is coupled to the word line 124. The gate ofaccess transistor 152 is coupled to the word line 123. The gate ofaccess transistor 153 is coupled to the word line 124. The drain ofaccess transistor 150 is coupled to the bottom electrode member 132 forsidewall pin memory cell 135, which has top electrode member 134 andbottom electrode member 132. The top electrode member 134 is coupled tothe bit line 141. It can be seen that the common source line 128 isshared by two rows of memory cells, where a row is arranged in theY-direction in the illustrated schematic. In other embodiments, theaccess transistors can be replaced by diodes, or other structures forcontrolling current flow to selected devices in the array for readingand writing data.

FIG. 2 is a simplified block diagram of an integrated circuit 275 of anRRAM architecture according to an embodiment of the present invention.The integrated circuit 275 includes a memory array implemented usingsidewall active pin bistable resistance random access memory cells on asemiconductor substrate. A row decoder 261 is coupled to a plurality ofword lines 262 arranged along rows in the memory array 260. A pindecoder 263 is coupled to a plurality of bit lines 264 arranged alongpins in the memory array 260 for reading and programming data from thesidewall pin memory cells in the memory array 260. Addresses aresupplied on a bus 265 to the pin decoder 263 and the row decoder 261.Sense amplifiers and data-in structures in a block 266 are coupled tothe pin decoder 263 via a data bus 267. Data is supplied via the data-inline 271 from input/output ports on the integrated circuit 275, or fromother data sources internal or external to the integrated circuit 275,to data-in structures in the block 266. In the illustrated embodiment,other circuitry 274 is included on the integrated circuit, such as ageneral-purpose processor or special purpose application circuitry, or acombination of modules providing system-on-a-chip functionalitysupported by the thin film bistable resistance random access memory cellarray. Data is supplied via the data-out line 272 from the senseamplifiers in block 266 to input/output ports on the integrated circuit275, or to other data destinations internal or external to theintegrated circuit 275.

A controller utilized in this example using bias arrangement statemachine 269 controls the application of bias arrangement supply voltages268, such as read, program, erase, erase verify and program verifyvoltages. The controller can be implemented using special-purpose logiccircuitry as known in the art. In alternative embodiments, thecontroller comprises a general-purpose processor, which may beimplemented on the same integrated circuit, which executes a computerprogram to control the operations of the device. In yet otherembodiments, a combination of special-purpose logic circuitry and ageneral-purpose processor may be utilized for implementation of thecontroller.

FIG. 3 is a simplified structural diagram illustrating a firstembodiment of a resistance random access memory 300 with a bottomdielectric member 320 disposed between a resistance random access member330 and a bottom electrode or contact plug 310. The resistance randomaccess memory 300 comprises the contact plug 310, the bottom dielectricmember 320 overlying the contact plug 310, the resistance random accessmemory member 330 overlying the bottom dielectric member 320, a topelectrode 340 overlying the resistance random access member 330, acontact plug 350 overlying the top electrode 340, and a bit line 360overlying the contact plug 350. The bottom dielectric member 320 isdisposed between the contact plug 310 and the resistance random accessmember 330 for enhancing the duration of the data retention. Exemplarymaterials for constructing the bottom dielectric member 320 includesilicon oxide, which is deposited using plasma enhanced (PE) orhigh-density-plasma (HDP) chemical vapor (CVD) deposition. The bottomdielectric member 320 typically ranges from about 1 nm to about 10 nm,or less than 1 nm. In this embodiment, the top electrode 340, theresistance random access memory member 330, and the bottom dielectricmember 320 have about the same dimensional values, e.g. the same lengthssuch that the sides are aligned to each other, which are longer than thewidth of the contact plug 310.

The resistive memory layer 330 is formed from a material that includesat least two stable resistance levels, referred to as resistance randomaccess memory material. Several materials have proved useful infabricating RRAM, as described below.

The term “bistable RRAM” refers to the control of a resistance level byone of the follow means: a voltage amplitude, a current amplitude or theelectrical polarity. The state controlling of a phase-change memory isconducted by the voltage amplitude, the current amplitude, or the pulsetime. The electrical polarity of the bistable RRAM 300 does not affectthe programming of the bistable RRAM 300.

The following are short summaries describing four types of resistivememory material suitable for implementing an RRAM. A first type ofmemory material suitable for use in embodiments is colossalmagnetoresistance (“CMR”) material, such as Pr_(x)Ca_(y)MnO₃ wherex:y=0.5:0.5, or other compositions with x: 0˜1; y: 0˜1. CMR materialthat includes Mn oxide is alternatively used.

An exemplary method for forming CMR material uses PVD sputtering ormagnetron-sputtering method with source gases of Ar, N₂, O₂, and/or He,etc. at the pressure of 1 mTorr˜100 mTorr. The deposition temperaturecan range from room temperature to ˜600° C., depending on thepost-deposition treatment condition. A collimater with an aspect ratioof 1˜5 can be used to improve the fill-in performance. To improve thefill-in performance, the DC bias of several tens of volts to severalhundreds of volts is also used. On the other hand, DC bias and thecollimater can be used simultaneously. A magnetic field of several tensof Gauss to as much as a Tesla (10,000 Gauss) may be applied to improvethe magnetic crystallized phase.

A post-deposition annealing treatment in vacuum or in an N₂ ambient orO₂/N₂ mixed ambient is optionally used to improve the crystallized stateof CMR material. The annealing temperature typically ranges from 400° C.to 600° C. with an annealing time of less than 2 hours.

The thickness of CMR material depends on the design of the cellstructure. A CMR thickness of 10 nm to 200 nm can be used for the corematerial. A buffer layer of YBCO (YBaCuO₃, which is a type of hightemperature superconductor material) is often used to improve thecrystallized state of CMR material. The YBCO is deposited before thedeposition of CMR material. The thickness of YBCO ranges from 30 nm to200 nm.

A second type of memory material is two-element compounds, such asNi_(x)O_(y); Ti_(x)O_(y); Al_(x)O_(y); W_(x)O_(y); Zn_(x)O_(y);Zr_(x)O_(y); Cu_(x)O_(y); etc, where x:y=0.5:0.5, or other compositionswith x: 0˜1; y: 0˜1. An exemplary formation method uses a PVD sputteringor magnetron-sputtering method with reactive gases of Ar, N₂, O₂, and/orHe, etc. at a pressure of 1 mTorr˜100 mTorr, using a target of metaloxide, such as Ni_(x)O_(y); Ti_(x)O_(y); Al_(x)O_(y); W_(x)O_(y);Zn_(x)O_(y); Zr_(x)O_(y); Cu_(x)O_(y); etc. The deposition is usuallyperformed at room temperature. A collimater with an aspect ratio of 1˜5can be used to improve the fill-in performance. To improve the fill-inperformance, the DC bias of several tens of volts to several hundreds ofvolts is also used. If desired, DC bias and the collimater can be usedsimultaneously.

A post-deposition annealing treatment in vacuum or in an N₂ ambient orO₂/N₂ mixed ambient is optionally performed to improve the oxygendistribution of metal oxide. The annealing temperature ranges from 400°C. to 600° C. with an annealing time of less than 2 hours.

An alternative formation method uses a PVD sputtering ormagnetron-sputtering method with reactive gases of Ar/O₂, Ar/N₂/O₂, pureO₂, He/O₂, He/N₂/O₂ etc. at a pressure of 1 mTorr˜100 mTorr, using atarget of metal oxide, such as Ni, Ti, Al, W, Zn, Zr, or Cu etc. Thedeposition is usually performed at room temperature. A collimater withan aspect ratio of 1˜5 can be used to improve the fill-in performance.To improve the fill-in performance, a DC bias of several tens of voltsto several hundreds of volts is also used. If desired, DC bias and thecollimater can be used simultaneously.

A post-deposition annealing treatment in vacuum or in an N₂ ambient orO₂/N₂ mixed ambient is optionally performed to improve the oxygendistribution of metal oxide. The annealing temperature ranges from 400°C. to 600° C. with an annealing time of less than 2 hours.

Yet another formation method uses oxidation by a high temperatureoxidation system, such as a furnace or a rapid thermal pulse (“RTP”)system. The temperature ranges from 200° C. to 700° C. with pure O₂ orN₂/O₂ mixed gas at a pressure of several mTorr to 1 atm. The time canrange several minutes to hours. Another oxidation method is plasmaoxidation. An RF or a DC source plasma with pure O₂ or Ar/O₂ mixed gasor Ar/N₂/O₂ mixed gas at a pressure of 1 mTorr to 100 mTorr is used tooxidize the surface of metal, such as Ni, Ti, Al, W, Zn, Zr, or Cu etc.The oxidation time ranges several seconds to several minutes. Theoxidation temperature ranges from room temperature to 300° C., dependingon the degree of plasma oxidation.

A third type of memory material is a polymer material, such as TCNQ withdoping of Cu, C₆₀, Ag etc. or a PCBM-TCNQ mixed polymer. One formationmethod uses evaporation by thermal evaporation, e-beam evaporation, ormolecular beam epitaxy (“MBE”) system. A solid-state TCNQ and dopantpellets are co-evaporated in a single chamber. The solid-state TCNQ anddopant pellets are put in a W-boat, a Ta-boat or a ceramic boat. A highelectrical current or an electron-beam is applied to melt the source sothat the materials are mixed and deposited on wafers. There are noreactive chemistries or gases. The deposition is performed at a pressureof 10⁻⁴ Torr to 10⁻¹⁰ Ton. The wafer temperature ranges from roomtemperature to 200° C.

A post-deposition annealing treatment in vacuum or in an N₂ ambient isoptionally performed to improve the composition distribution of polymermaterial. The annealing temperature ranges from room temperature to 300°C. with an annealing time of less than 1 hour.

Another technique for forming a layer of polymer-based memory materialis using a spin-coater with doped-TCNQ solution at a rotation of lessthan 1000 rpm. After spin-coating, the wafer is held (typically at roomtemperature or temperature less than 200° C.) for a time sufficient forsolid-state formation. The hold time ranges from several minutes todays, depending on the temperature and on the formation conditions.

A fourth type of memory material is chalcogenide material, such asGe_(x)Sb_(y)Te_(z) where x:y:z=2:2:5, or other compositions with x: 0˜5;y: 0˜5; z: 0˜10. GeSbTe with doping, such as N—, Si—, Ti—, or otherelement doping is alternatively used.

An exemplary method for forming chalcogenide material uses aPVD-sputtering or magnetron-sputtering method with source gas(es) of Ar,N₂, and/or He, etc. at a pressure of 1 mTorr˜100 mTorr. The depositionis usually performed at room temperature. A collimater with an aspectratio of 1˜5 can be used to improve the fill-in performance. To improvethe fill-in performance, a DC bias of several tens of volts to severalhundreds of volts is also used. On the other hand, DC bias and thecollimater can be used simultaneously.

A post-deposition annealing treatment in vacuum or in an N₂ ambient isoptionally performed to improve the crystallized state of chalcogenidematerial. The annealing temperature typically ranges from 100° C. to400° C. with an annealing time of less than 30 minutes. The thickness ofchalcogenide material depends on the design of the cell structure. Ingeneral, a chalcogenide material with thickness greater than 8 nm canhave a phase change characterization so that the material exhibits atleast two stable resistance states.

Embodiments of the memory cell in the bistable RRAM 300 may includephase change based memory materials, including chalcogenide basedmaterials and other materials, for the resistance random access memorymember 330. Chalcogens include any of the four elements oxygen (O),sulfur (S), selenium (Se), and tellurium (Te), forming part of group VIof the periodic table. Chalcogenides comprise compounds of a chalcogenwith a more electropositive element or radical. Chalcogenide alloyscomprise combinations of chalcogenides with other materials such astransition metals. A chalcogenide alloy usually contains one or moreelements from column six of the periodic table of elements, such asgermanium (Ge) and tin (Sn). Often, chalcogenide alloys includecombinations including one or more of antimony (Sb), gallium (Ga),indium (In), and silver (Ag). Many phase change based memory materialshave been described in technical literature, including alloys of: Ga/Sb,In/Sb, In/Se, Sb/Te, Ge/Te, Ge/Sb/Te, In/Sb/Te, Ga/Se/Te, Sn/Sb/Te,In/Sb/Ge, Ag/In/Sb/Te, Ge/Sn/Sb/Te, Ge/Sb/Se/Te and Te/Ge/Sb/S. In thefamily of Ge/Sb/Te alloys, a wide range of alloy compositions may beworkable. The compositions can be characterized asTe_(a)Ge_(b)Sb_(100-(a+b)). One researcher has described the most usefulalloys as having an average concentration of Te in the depositedmaterials well below 70%, typically below about 60% and ranged ingeneral from as low as about 23% up to about 58% Te and most preferablyabout 48% to 58% Te. Concentrations of Ge were above about 5% and rangedfrom a low of about 8% to about 30% average in the material, remaininggenerally below 50%. Most preferably, concentrations of Ge ranged fromabout 8% to about 40%. The remainder of the principal constituentelements in this composition was Sb. These percentages are atomicpercentages that total 100% of the atoms of the constituent elements.(Ovshinsky '112 patent, cols 10-11.) Particular alloys evaluated byanother researcher include Ge₂Sb₂Te₅, GeSb₂Te₄ and GeSb₄Te₇. (NoboruYamada, “Potential of Ge—Sb—Te Phase-Change Optical Disks forHigh-Data-Rate Recording”, SPIE v. 3109, pp. 28-37 (1997).) Moregenerally, a transition metal such as chromium (Cr), iron (Fe), nickel(Ni), niobium (Nb), palladium (Pd), platinum (Pt) and mixtures or alloysthereof may be combined with Ge/Sb/Te to form a phase change alloy thathas programmable resistive properties. Specific examples of memorymaterials that may be useful are given in Ovshinsky '112 patent atcolumns 11-13, which examples are hereby incorporated by reference.

Phase change alloys can be switched between a first structural state, inwhich the material is in a generally amorphous solid phase, and a secondstructural state, in which the material is in a generally crystallinesolid phase, in its local order in the active channel region of thecell. These alloys are at least bistable. The term amorphous is used torefer to a relatively less ordered structure, more disordered than asingle crystal, which has the detectable characteristics such as higherelectrical resistivity than the crystalline phase. The term crystallineis used to refer to a relatively more ordered structure, more orderedthan in an amorphous structure, which has detectable characteristicssuch as lower electrical resistivity than the amorphous phase.Typically, phase change materials may be electrically switched betweendifferent detectable states of local order across the spectrum betweencompletely amorphous and completely crystalline states. Other materialcharacteristics affected by the change between amorphous and crystallinephases include atomic order, free electron density and activationenergy. The material may be switched either into different solid phasesor into mixtures of two or more solid phases, providing a gray scalebetween completely amorphous and completely crystalline states. Theelectrical properties in the material may vary accordingly.

Phase change alloys can be changed from one phase state to another byapplication of electrical pulses. It has been observed that a shorter,higher amplitude pulse tends to change the phase change material to agenerally amorphous state. A longer, lower amplitude pulse tends tochange the phase change material to a generally crystalline state. Theenergy in a shorter, higher amplitude pulse is high enough to allow forbonds of the crystalline structure to be broken and short enough toprevent the atoms from realigning into a crystalline state. Appropriateprofiles for pulses can be determined, without undue experimentation,specifically adapted to a particular phase change alloy. In followingsections of the disclosure, the phase change material is referred to asGST, and it will be understood that other types of phase changematerials can be used. A material useful for implementation of a PCRAMdescribed herein is Ge₂Sb₂Te₅.

Other programmable resistive memory materials may be used in otherembodiments of the invention, including N₂ doped GST, Ge_(x)Sb_(y), orother material that uses different crystal phase changes to determineresistance; Pr_(x)Ca_(y)MnO₃, PrSrMnO₃, ZrO_(x), WO_(x), TiO_(x),AlO_(x), or other material that uses an electrical pulse to change theresistance state; 7,7,8,8-tetracyanoquinodimethane (TCNQ),methanofullerene 6,6-phenyl C61-butyric acid methyl ester (PCBM),TCNQ-PCBM, Cu-TCNQ, Ag-TCNQ, C₆₀-TCNQ, TCNQ doped with other metal, orany other polymer material that has bistable or multi-stable resistancestate controlled by an electrical pulse.

Processes for manufacturing the bit-line 360, the top electrode 340, andthe contact plugs 310, 350 can be selected from commercially availablemethods. Although silicon oxide has been identified above as a suitablematerial for implementing the bottom dielectric member 320, othersuitable materials for implementing the bottom dielectric member 320 canbe practiced without departing from the spirit of the present invention.

FIG. 4 is a simplified structural diagram illustrating a secondembodiment of a resistance random access memory 400 with a bottomdielectric member 410 disposed between a resistance random access member420 and the contact plug 310 where the bottom dielectric member 410 andthe resistance random access member 420 have varying lengths. The lengthof the bottom dielectric member 410 is longer than the resistance randomaccess memory member 420 immediately above, and is longer than thecontact plug 310 immediately below. The bottom dielectric member 410 hasan upper surface 411 and a lower surface 412. The upper surface 411 ofthe bottom dielectric member 410 extends beyond a bottom surface 421 ofthe RRAM member 420. The lower surface 412 of the bottom dielectricmember 410 extends beyond a top surface 311 of the contact plug 310. Theresistance random access memory member 420 has about the same length asthe length of the top electrode 340.

FIG. 5 is a simplified structural diagram illustrating a thirdembodiment of a resistance random access memory 500 with a bottomdielectric member 510 disposed between a resistance random access member520 and the contact plug 310 where the resistance random access member520 embodies the bottom dielectric member 510. The bottom dielectricmember 510 is disposed within the resistance random access member 520.The bottom dielectric member 510 includes an upper surface 511 and sidewalls 512, 513. The resistance random access memory member 520substantially covers the upper surface 511 of the bottom dielectricmember 510, and the sidewalls 512, 513 of the bottom dielectric member510.

FIG. 6 is a simplified structural diagram illustrating a fourthembodiment of a resistance random access memory 600 with a bottomdielectric member 610 disposed between a resistance random access member620 and the contact plug 310 where the resistance random access member620 is placed between a top dielectric member 630 and the bottomdielectric member 610. The bottom dielectric member 610 includes sides611, 612 and lower surface 613. The lower surface 613 of the bottomdielectric member 610 has a length that is longer than an upper surface311 of the contact plug 310. The top electrode 340, the top dielectricmember 630, the resistance random access member 620, and the bottomdielectric member 610 have sides that are substantially aligned witheach other. The top electrode 340 has sides 341, 342, the top dielectricmember 630 has sides 631, 632, the resistance random access member 620has sides 621, 622, and the bottom dielectric member 610 has sides 611,612. The sides 341, 342 of the top electrode 340, the sides 631, 632 ofthe top dielectric member 630, the sides 621, 622 of the resistancerandom access member 620, and the sides 611, 612 of the bottomdielectric member 610 are substantially aligned with one another.

FIG. 7 is a simplified structural diagram illustrating a fifthembodiment of a resistance random access memory 700 with a bottomdielectric member 710 disposed between a resistance random access member720 and the contact plug 310 where the lengths of the bottom dielectricmember 710 and the resistance random access member 720 are elongated.The bottom dielectric member 710 has a lower surface 713 which has alength that is longer than an upper surface 311 of the contact plug 310.The resistance random access memory member 720 has an upper surface 723which has a length that is longer than a lower surface 343 of the topelectrode 340. The resistance random access memory member 720 has sides721, 722, and the bottom dielectric member 710 has sides 711, 712. Thesides 711, 712 of the bottom dielectric member 710 are substantiallyaligned with the sides 721, 722 of the resistance random access memorymember 720.

FIG. 8 is a simplified structural diagram illustrating a sixthembodiment of a resistance random access memory 800 with a bottomdielectric member 810 disposed between a resistance random access member820 and the contact plug 310 where a top dielectric member 830 embodiesthe resistance random access member 820 and a bottom dielectric member810. The resistance random access member 820 and the bottom dielectricmember 810 are disposed within the top dielectric 830. The bottomdielectric member 810 includes an upper surface 811, a lower surface812, and side walls 813, 814. The resistance random access memory member820 includes an upper surface 821, a lower surface 822, and side walls823, 824. The top electrode 830 comprises an inverted u-like shape thatsubstantially covers the upper surface 821 of the resistance randomaccess memory member 820, the side walls 823, 813 of the resistancerandom access memory member 820 and the bottom dielectric member 810,and substantially covers the side walls 824, 814 of the resistancerandom access memory member 820 and the bottom dielectric member 810.

FIG. 9 is a simplified structural diagram illustrating a sixthembodiment of a resistance random access memory 900 with a bottomdielectric member 820 underlying a resistance random access memorymember 830 where the resistance random access member 620 is placedbetween the top dielectric member 630 and the bottom dielectric member610, the top dielectric member 630 underlying the top electrode 340, thebottom dielectric member 610 overlying a bottom electrode 910, and thebottom electrode 910 overlying the contact plug 310. The bottomelectrode 910 includes sides 911, 912 and lower surface 913. The sides341, 342 of the top electrode 340, the sides 631, 632 of the topdielectric member 630, the sides 621, 622 of the resistance randomaccess memory member 620, the sides 611, 612 of the bottom dielectricmember 610, and the sides 911, 912 of the bottom electrode 910 aresubstantially aligned with one another. The lower surface 913 of thebottom electrode 910 has a length that is longer than the upper surface311 of the contact plug 310.

FIG. 10A is a timing diagram 1000 illustrating the measuring of aSET/RESET window of a programmable resistance random access memory. ASET operation 1010 begins at time t₁. After a waiting time 1012, a readoperation 1014 is executed to read the READ current. At time t₂, theRESET operation 1020 begins. After a waiting time 1022, a read operation1024 is executed to read the RESET current.

FIG. 10B is a graphical diagram 1050 illustrating sample data curves ofa programmable resistance random access memory with and without a bottomdielectric member in which the graph 1050 shows a SET/RESET windowparameter 1062 on the y-axis and a retention test duration 1064 on thex-axis. A curve 1060 represents a programmable resistance random accessmemory with a resistance random access memory member implemented withnickel oxide (NiO) without a bottom dielectric member underlying theresistance random access memory member. The SET/RESET window 1062operates in a logarithmic fashion over time. The SET/RESET window 1062for the curve 1060 approaches closer to “1” after 1 day of retentiontime.

A curve 1070 represents a programmable resistance random access memorywith a resistance random access memory member implemented with nickeloxide (NiO) with a bottom dielectric member underlying the resistancerandom access memory member. The bottom dielectric member in thisillustration is deposited using chemical vapor deposition and has athickness of about 10 nm. The SET/RESET window 1062 for the curve 1070remains at high levels and does not degrade substantially over time,thereby improving the data retention in the resistance random accessmemory member 330.

For additional information on the manufacture, component materials, useand operation of phase change random access memory devices, see U.S.patent application Ser. No. 11/155,067 entitled “Thin Film Fuse PhaseChange RAM and Manufacturing Method”, filed on 17 Jun. 2005, owned bythe assignee of this application and incorporated by reference as iffully set forth herein.

The invention has been described with reference to specific exemplaryembodiments. Various modifications, adaptations, and changes may be madewithout departing from the spirit and scope of the invention.Accordingly, the specification and drawings are to be regarded asillustrative of the principles of this invention rather thanrestrictive, the invention is defined by the following appended claims.

We claim:
 1. A method of forming memory structure, comprising: forming afirst electrode and a conductive member; forming a resistance memorymember disposed between the first electrode and the conductive member;forming a bottom dielectric member located between and completelyseparating the resistance memory member from the conductive member sothe resistance memory member does not physically contact the conductivemember; and forming a top dielectric member located between andseparating the resistance memory member from the first electrode so theresistance memory member does not contact the first electrode.
 2. Themethod of claim 1, wherein the bottom dielectric member forming step iscarried out to completely separate the resistance memory element fromthe conductive member so that the resistance memory element does notphysically contact the conductive member.
 3. The method of claim 1,wherein the bottom dielectric member is formed to be a substantiallyplanar structure.
 4. The method of claim 1, wherein the resistancememory member is formed to be a substantially planar structure.
 5. Themethod of claim 1, wherein the resistance memory member, the bottomdielectric member and the top dielectric member are formed with theresistance memory member directly contacting the bottom and topdielectric members.
 6. The method of claim 1, wherein the bottomdielectric member is formed to have a thickness of about 10 nm or less.7. The method of claim 1, wherein the resistance memory member is formedto be made of one of the following two-element compounds: NixOy, TixOy,AlxOy, WxOy, ZnxOy, ZrxOy, CuxOy, where x:y=0.5:0.5.
 8. The method ofclaim 1, wherein: both of the bottom dielectric member and theresistance memory member have sides; the resistance memory member andthe bottom dielectric member are formed so that said sides aresubstantially aligned; and the top dielectric member is formed so tosubstantially cover the sides of the resistance memory member and thesides of the bottom dielectric member.
 9. The method of claim 1,wherein: the resistance memory member is formed to have upper and lowersurfaces and sides joining the upper and lower surfaces; the top andbottom dielectric members are formed to directly contact andsubstantially cover the upper and lower surfaces and sides of theresistance memory member.
 10. A method of forming memory structure,comprising: forming a first electrode and a conductive member; forming aresistance random access memory member disposed between the firstelectrode and the conductive member; forming a bottom dielectric memberlocated between and completely separating the resistance random accessmemory member from the conductive member so the resistance random accessmemory member does not contact the conductive member or any electricallyconductive element between the resistance random access memory memberand the conductive member; the bottom dielectric member having an outerside surface; and the resistance random access memory member havingportions substantially covering the outer side surface with the bottomdielectric member therebetween.
 11. The method of claim 10, wherein thebottom dielectric member forming step is carried out so that the bottomdielectric member completely separates the resistance random accessmemory member from the conductive member so the resistance random accessmemory member does not contact any electrically conductive elementbetween the resistance random access memory member and the conductivemember.
 12. The method of claim 10, wherein: the bottom dielectricmember is in direct contact with the resistance random access memorymember and the conductive member.
 13. The method of claim 10, whereinthe resistance random access memory member is in direct contact with thefirst electrode.
 14. The method of claim 10, wherein: the resistancememory member comprises a two-element compound with a composition ofMexOy, wherein Me is a metal and x: 0˜1; y: 0˜1.
 15. A method of formingmemory structure, comprising: forming a first electrode and a conductivemember; forming a resistance memory member in contact with the firstelectrode; forming a bottom dielectric member located between theresistance memory member and the conductive member so that current flowbetween the resistance memory member and the conductive member isthrough the bottom dielectric member; and the bottom dielectric memberhaving a dimension d1, the resistance memory member having a dimensiond2, dimension d1 being larger than dimension d2, dimensions d1 and d2being measured parallel to a line extending between the resistancememory member and the bottom dielectric member.
 16. The method of claim15, wherein: the resistance memory member comprises a two-elementcompound with a composition of MexOy, wherein Me is a metal and x: 0˜1;y: 0˜1.
 17. The method of claim 15, wherein: the bottom dielectricmember has a top surface, and wherein an area of the top surface is notin contact with the resistance memory member.
 18. A method of formingmemory structure, comprising: forming a first electrode and a conductivemember; forming a resistance memory member disposed between the firstelectrode and the conductive member; forming a bottom dielectric memberlocated between the resistance memory member and the conductive member;the bottom dielectric member having a dimension d1, the resistancememory member having a dimension d2, dimension d1 being larger thandimension d2, dimensions d1 and d2 being measured parallel to a lineextending between the resistance memory member and the bottom dielectricmember; and the resistance memory member comprising a two-elementcompound with a composition of MexOy, wherein Me is a metal and x: 0˜1;y: 0˜1.
 19. The method of claim 18, wherein the bottom dielectric memberis formed to have a thickness of about 10 nm or less.
 20. The method ofclaim 18, wherein the resistance memory member is formed to be made ofone of the following two-element compounds: NixOy, TixOy, AlxOy, WxOy,ZnxOy, ZrxOy, CuxOy, where x:y=0.5:0.5.